Результаты поиска PSMN070-200P

Найдено 2 результатов.

• PSMN070-200P
  NXP — MOSFETs - Arrays RAIL PWR-MOS
• PSMN070-200P,127
  NXP Semiconductors — NXP Semiconductors PSMN070-200P,127 Current - Continuous Drain (id) @ 25В° C: 35A Drain To Source Voltage (vdss): 200V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 77nC @ 10V Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 250W Rds On (max) @ Id, Vgs: 70 mOhm @ 17A, 10V Series: TrenchMOSв„ў Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 200 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 35 A Resistance Drain-Source RDS (on): 0.07 Ohms Configuration: Single Maximum Operating Temperature: + 175 C Mounting Style: Through Hole Fall Time: 90 ns Minimum Operating Temperature: - 55 C Power Dissipation: 250 W Rise Time: 100 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 80 ns Part # Aliases: PSMN070-200P Other Names: 934055718127::PSMN070-200P::PSMN070-200P