Результаты поиска PSMN070-200B,118

Найдено 1 результатов.

• PSMN070-200B,118
  NXP Semiconductors — NXP Semiconductors PSMN070-200B,118 Configuration: Single Continuous Drain Current: 35 A Current - Continuous Drain (id) @ 25В° C: 35A Drain To Source Voltage (vdss): 200V Drain-source Breakdown Voltage: 200 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 77nC @ 10V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1950647 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: DВІPak, TO-263 (2 leads + tab) Power - Max: 250W Power Dissipation: 250000 mW Rds On (max) @ Id, Vgs: 70 mOhm @ 17A, 10V Resistance Drain-source Rds (on): 0.07 Ohm @ 10 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 200 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.07 Ohms Fall Time: 90 ns Rise Time: 100 ns Factory Pack Quantity: 800 Typical Turn-Off Delay Time: 80 ns Part # Aliases: /T3 PSMN070-200B Other Names: 934055719118::PSMN070-200B /T3::PSMN070-200B /T3