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• PSMN057-200P,127
  NXP Semiconductors — NXP Semiconductors PSMN057-200P,127 Configuration: Single Continuous Drain Current: 39 A Current - Continuous Drain (id) @ 25В° C: 39A Drain To Source Voltage (vdss): 200V Drain-source Breakdown Voltage: 200 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 96nC @ 10V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1950616 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 250W Power Dissipation: 250000 mW Rds On (max) @ Id, Vgs: 57 mOhm @ 17A, 10V Resistance Drain-source Rds (on): 0.057 Ohm @ 10 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 200 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.057 Ohms Fall Time: 78 ns Rise Time: 58 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 105 ns Part # Aliases: PSMN057-200P Other Names: 934056421127::PSMN057-200P::PSMN057-200P