Результаты поиска PSMN035-150P,127

Найдено 2 результатов.

• PSMN035-150P,127
  NXP Semiconductors — NXP Semiconductors PSMN035-150P,127 Configuration: Single Continuous Drain Current: 50 A Current - Continuous Drain (id) @ 25В° C: 50A Drain To Source Voltage (vdss): 150V Drain-source Breakdown Voltage: 150 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 79nC @ 10V Gate-source Breakdown Voltage: 20 V ID_COMPONENTS: 1950626 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 250W Power Dissipation: 250 W Rds On (max) @ Id, Vgs: 35 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 30 mOhms Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 150 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 30 mOhms Fall Time: 93 ns Rise Time: 138 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 79 ns Part # Aliases: PSMN035-150P Other Names: 934055716127::PSMN035-150P::PSMN035-150P
• PSMN035-150P,127
  NXP Semiconductors — NXP Semiconductors PSMN035-150P,127 Configuration: Single Continuous Drain Current: 50 A Current - Continuous Drain (id) @ 25В° C: 50A Drain To Source Voltage (vdss): 150V Drain-source Breakdown Voltage: 150 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 79nC @ 10V Gate-source Breakdown Voltage: 20 V ID_COMPONENTS: 1950626 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 250W Power Dissipation: 250 W Rds On (max) @ Id, Vgs: 35 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 30 mOhms Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 150 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 30 mOhms Fall Time: 93 ns Rise Time: 138 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 79 ns Part # Aliases: PSMN035-150P Other Names: 934055716127::PSMN035-150P::PSMN035-150P