Результаты поиска PSMN015-100P

Найдено 3 результатов.

• PSMN015-100P
  NXP — MOSFETs - Arrays RAIL PWR-MOS
• PSMN015-100P,127
  NXP Semiconductors — NXP Semiconductors PSMN015-100P,127 Configuration: Single Continuous Drain Current: 75 A Current - Continuous Drain (id) @ 25?° C: 75A Drain To Source Voltage (vdss): 100V Drain-source Breakdown Voltage: 100 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 90nC @ 10V Gate-source Breakdown Voltage: 20 V ID_COMPONENTS: 1950606 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 300W Power Dissipation: 300000 mW Rds On (max) @ Id, Vgs: 15 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.015 Ohm @ 10 V Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 100 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.015 Ohms Fall Time: 50 ns Rise Time: 65 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 95 ns Part # Aliases: PSMN015-100P Other Names: 934055640127::PSMN015-100P::PSMN015-100P
• PSMN015-100P,127
  NXP Semiconductors — NXP Semiconductors PSMN015-100P,127 Configuration: Single Continuous Drain Current: 75 A Current - Continuous Drain (id) @ 25?° C: 75A Drain To Source Voltage (vdss): 100V Drain-source Breakdown Voltage: 100 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 90nC @ 10V Gate-source Breakdown Voltage: 20 V ID_COMPONENTS: 1950606 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 300W Power Dissipation: 300000 mW Rds On (max) @ Id, Vgs: 15 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.015 Ohm @ 10 V Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 100 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.015 Ohms Fall Time: 50 ns Rise Time: 65 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 95 ns Part # Aliases: PSMN015-100P Other Names: 934055640127::PSMN015-100P::PSMN015-100P