Результаты поиска PSMN009-100W,127

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• PSMN009-100W,127
  NXP Semiconductors — NXP Semiconductors PSMN009-100W,127 Current - Continuous Drain (id) @ 25?° C: 100A Drain To Source Voltage (vdss): 100V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 214nC @ 10V Input Capacitance (ciss) @ Vds: 9000pF @ 25V Mounting Type: Through Hole Package / Case: TO-247-3 Power - Max: 300W Rds On (max) @ Id, Vgs: 9 mOhm @ 25A, 10V Series: TrenchMOS?„? Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 100 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 100 A Resistance Drain-Source RDS (on): 0.009 Ohms Configuration: Single Maximum Operating Temperature: + 175 C Mounting Style: Through Hole Fall Time: 100 ns Minimum Operating Temperature: - 55 C Power Dissipation: 300 W Rise Time: 100 ns Factory Pack Quantity: 25 Typical Turn-Off Delay Time: 260 ns Part # Aliases: PSMN009-100W Other Names: 934055801127, PSMN009-100W