Результаты поиска PSMN005-75P,127
Найдено 2 результатов.
- NXP Semiconductors — NXP Semiconductors PSMN005-75P,127 Current - Continuous Drain (id) @ 25В° C: 75A Drain To Source Voltage (vdss): 75V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 165nC @ 10V Input Capacitance (ciss) @ Vds: 8250pF @ 25V Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 230W Rds On (max) @ Id, Vgs: 5 mOhm @ 25A, 10V Series: TrenchMOSв„ў Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 75 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 75 A Resistance Drain-Source RDS (on): 0.005 Ohms Configuration: Single Maximum Operating Temperature: + 175 C Mounting Style: Through Hole Fall Time: 74 ns Minimum Operating Temperature: - 55 C Power Dissipation: 230 W Rise Time: 73 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 144 ns Part # Aliases: PSMN005-75P Other Names: 934057042127, PSMN005-75P
- NXP Semiconductors — NXP Semiconductors PSMN005-75P,127 Current - Continuous Drain (id) @ 25В° C: 75A Drain To Source Voltage (vdss): 75V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 165nC @ 10V Input Capacitance (ciss) @ Vds: 8250pF @ 25V Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 230W Rds On (max) @ Id, Vgs: 5 mOhm @ 25A, 10V Series: TrenchMOSв„ў Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 75 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 75 A Resistance Drain-Source RDS (on): 0.005 Ohms Configuration: Single Maximum Operating Temperature: + 175 C Mounting Style: Through Hole Fall Time: 74 ns Minimum Operating Temperature: - 55 C Power Dissipation: 230 W Rise Time: 73 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 144 ns Part # Aliases: PSMN005-75P Other Names: 934057042127, PSMN005-75P