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• PSMN005-75B,118
  NXP Semiconductors — NXP Semiconductors PSMN005-75B,118 Configuration: Single Continuous Drain Current: 75 A Current - Continuous Drain (id) @ 25?° C: 75A Drain To Source Voltage (vdss): 75V Drain-source Breakdown Voltage: 75 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 165nC @ 10V Gate-source Breakdown Voltage: 20 V ID_COMPONENTS: 1950414 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: D??Pak, TO-263 (2 leads + tab) Power - Max: 230W Power Dissipation: 230000 mW Rds On (max) @ Id, Vgs: 5 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.005 Ohm @ 10 V Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 75 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.005 Ohms Fall Time: 74 ns Rise Time: 73 ns Factory Pack Quantity: 800 Typical Turn-Off Delay Time: 144 ns Part # Aliases: /T3 PSMN005-75B Other Names: 934057043118::PSMN005-75B /T3::PSMN005-75B /T3