Результаты поиска PMST3906,135

Найдено 2 результатов.

• PMST3906,135
  Philips Semiconductors — Philips Semiconductors PMST3906,135 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: PNP Collector- Base Voltage VCBO: 40 V Collector- Emitter Voltage VCEO Max: 40 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 0.2 A Gain Bandwidth Product fT: 250 MHz DC Collector/Base Gain hfe Min: 60 at 0.1 mA at 1 V, 80 at 1 mA at 1 V, 100 at 10 mA at 1 V, 60 at 50 mA at 1 V, 30 at 100 mA at 1 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-323 DC Current Gain hFE Max: 60 at 0.1 mA at 1 V Maximum Power Dissipation: 200 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 10000 Part # Aliases: /T3 PMST3906
• PMST3906,135
  NXP Semiconductors — Philips Semiconductors PMST3906,135 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: PNP Collector- Base Voltage VCBO: 40 V Collector- Emitter Voltage VCEO Max: 40 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 0.2 A Gain Bandwidth Product fT: 250 MHz DC Collector/Base Gain hfe Min: 60 at 0.1 mA at 1 V, 80 at 1 mA at 1 V, 100 at 10 mA at 1 V, 60 at 50 mA at 1 V, 30 at 100 mA at 1 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-323 DC Current Gain hFE Max: 60 at 0.1 mA at 1 V Maximum Power Dissipation: 200 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 10000 Part # Aliases: /T3 PMST3906