Результаты поиска PMSS3904,115

Найдено 2 результатов.

• PMSS3904,115
  NXP Semiconductors — NXP Semiconductors PMSS3904,115 Collector- Emitter Voltage Vceo Max: 40 V Configuration: Single Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V Emitter- Base Voltage Vebo: 6 V Frequency - Transition: 180MHz ID_COMPONENTS: 1949708 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 0.1 A Maximum Operating Frequency: 180 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-70-3, SOT-323-3 Power - Max: 200mW Power Dissipation: 200 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (max): 40V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 40 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 0.1 A Gain Bandwidth Product fT: 180 MHz DC Collector/Base Gain hfe Min: 40 at 0.1 mA at 1 V, 70 at 1 mA at 1 V, 100 at 10 mA at 1 V, 60 at 50 mA at 1 V, 30 at 100 mA at 1 V DC Current Gain hFE Max: 40 at 0.1 mA at 1 V Maximum Power Dissipation: 200 mW Factory Pack Quantity: 3000 Part # Aliases: PMSS3904 T/R Other Names: 934026800115, PMSS3904 T/R
• PMSS3904,115
  NXP Semiconductors — NXP Semiconductors PMSS3904,115 Collector- Emitter Voltage Vceo Max: 40 V Configuration: Single Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V Emitter- Base Voltage Vebo: 6 V Frequency - Transition: 180MHz ID_COMPONENTS: 1949708 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 0.1 A Maximum Operating Frequency: 180 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-70-3, SOT-323-3 Power - Max: 200mW Power Dissipation: 200 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (max): 40V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 40 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 0.1 A Gain Bandwidth Product fT: 180 MHz DC Collector/Base Gain hfe Min: 40 at 0.1 mA at 1 V, 70 at 1 mA at 1 V, 100 at 10 mA at 1 V, 60 at 50 mA at 1 V, 30 at 100 mA at 1 V DC Current Gain hFE Max: 40 at 0.1 mA at 1 V Maximum Power Dissipation: 200 mW Factory Pack Quantity: 3000 Part # Aliases: PMSS3904 T/R Other Names: 934026800115, PMSS3904 T/R