Результаты поиска PMN34UN,135

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• PMN34UN,135
  NXP Semiconductors — NXP Semiconductors PMN34UN,135 Current - Continuous Drain (id) @ 25В° C: 4.9A Drain To Source Voltage (vdss): 30V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 9.9nC @ 4.5V Input Capacitance (ciss) @ Vds: 790pF @ 25V Mounting Type: Surface Mount Package / Case: SC-74-6 Power - Max: 1.75W Rds On (max) @ Id, Vgs: 46 mOhm @ 2A, 4.5V Series: TrenchMOSв„ў Vgs(th) (max) @ Id: 700mV @ 1mA Product Category: MOSFET RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 8 V Continuous Drain Current: 4.9 A Resistance Drain-Source RDS (on): 46 mOhms at 4.5 V Configuration: Single Quad Drain Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Fall Time: 12 ns Minimum Operating Temperature: - 55 C Power Dissipation: 1750 mW Rise Time: 12 ns Factory Pack Quantity: 10000 Typical Turn-Off Delay Time: 50 ns Part # Aliases: /T3 PMN34UN Other Names: 934057584135, PMN34UN /T3