Результаты поиска PMN27UN,135

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• PMN27UN,135
  NXP Semiconductors — NXP Semiconductors PMN27UN,135 Configuration: Single Quad Drain Continuous Drain Current: 5.7 A Current - Continuous Drain (id) @ 25В° C: 5.7A Drain To Source Voltage (vdss): 20V Drain-source Breakdown Voltage: 20 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 10.6nC @ 4.5V Gate-source Breakdown Voltage: +/- 8 V ID_COMPONENTS: 1952459 Input Capacitance (ciss) @ Vds: 740pF @ 10V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-74-6 Power - Max: 1.75W Power Dissipation: 1750 mW Rds On (max) @ Id, Vgs: 34 mOhm @ 2A, 4.5V Resistance Drain-source Rds (on): 0.034 Ohm @ 4.5 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 700mV @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 20 V Gate-Source Breakdown Voltage: +/- 8 V Resistance Drain-Source RDS (on): 34 mOhms at 4.5 V Fall Time: 14.5 ns Rise Time: 14.5 ns Factory Pack Quantity: 10000 Typical Turn-Off Delay Time: 55 ns Part # Aliases: /T3 PMN27UN Other Names: 934057330135, PMN27UN /T3