Результаты поиска PMMT591A,215
Найдено 1 результатов.
- NXP Semiconductors — NXP Semiconductors PMMT591A,215 Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 100mA, 5V Frequency - Transition: 150MHz Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3в„ў, SSD3, SST3 Power - Max: 250mW Series: - Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 500mV @ 100mA, 1A Voltage - Collector Emitter Breakdown (max): 40V Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: PNP Collector- Base Voltage VCBO: 40 V Collector- Emitter Voltage VCEO Max: 40 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 150 MHz DC Collector/Base Gain hfe Min: 300 at 1 mA at 5 V, 300 at 100 mA at 5 V, 250 at 500 mA at 5 V, 160 at 1 A at 5 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT DC Current Gain hFE Max: 300 at 1 mA at 5 V Maximum Power Dissipation: 250 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 3000 Part # Aliases: PMMT591A T/R Other Names: 934055114215::PMMT591A T/R::PMMT591A T/R