Результаты поиска PMEM4010ND,115
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- NXP Semiconductors — NXP Semiconductors PMEM4010ND,115 Collector- Emitter Voltage Vceo Max: 40 V Configuration: Single Continuous Collector Current: 1 A Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): 100nA Dc Collector/base Gain Hfe Min: 200 Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 500mA, 5V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 150MHz Gain Bandwidth Product Ft: 150 MHz ID_COMPONENTS: 1950266 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 2 A Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-74-6 Power - Max: 600mW Power Dissipation: 600 mW Series: - Transistor Polarity: NPN Transistor Type: NPN + Diode (Isolated) Vce Saturation (max) @ Ib, Ic: 210mV @ 100mA, 1A Voltage - Collector Emitter Breakdown (max): 40V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 40 V Collector- Emitter Voltage VCEO Max: 40 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 2 A Gain Bandwidth Product fT: 150 MHz DC Collector/Base Gain hfe Min: 200 DC Current Gain hFE Max: 900 Maximum Power Dissipation: 600 mW Factory Pack Quantity: 3000 Part # Aliases: PMEM4010ND T/R Other Names: 934057261115, PMEM4010ND T/R