Результаты поиска PMBTA42DS,125

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• PMBTA42DS,125
  NXP Semiconductors — NXP Semiconductors PMBTA42DS,125 Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 30mA, 10V Frequency - Transition: 50MHz Mounting Type: Surface Mount Package / Case: SC-74-6 Power - Max: 420mW Series: - Transistor Type: 2 NPN (Dual) Vce Saturation (max) @ Ib, Ic: 500mV @ 2mA, 20mA Voltage - Collector Emitter Breakdown (max): 300V RoHS: yes Configuration: Dual Transistor Polarity: NPN Collector- Base Voltage VCBO: 300 V Collector- Emitter Voltage VCEO Max: 300 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter Saturation Voltage: 0.5 V Maximum DC Collector Current: 200 mA Gain Bandwidth Product fT: 50 MHz Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Continuous Collector Current: 100 mA DC Current Gain hFE Max: 40 Maximum Power Dissipation: 700 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 3000 Other Names: 934059919125