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• PHT6N06T,135
  NXP Semiconductors — NXP Semiconductors PHT6N06T,135 Configuration: Single Dual Drain Continuous Drain Current: 5.5 A Current - Continuous Drain (id) @ 25В° C: 5.5A Drain To Source Voltage (vdss): 55V Drain-source Breakdown Voltage: 55 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 5.6nC @ 10V Gate-source Breakdown Voltage: +/- 20 V Input Capacitance (ciss) @ Vds: 175pF @ 25V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261 Power - Max: 8.3W Power Dissipation: 8.3 W Rds On (max) @ Id, Vgs: 150 mOhm @ 5A, 10V Resistance Drain-source Rds (on): 0.15 Ohms Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.15 Ohms Fall Time: 4.5 ns Rise Time: 14.5 ns Factory Pack Quantity: 4000 Typical Turn-Off Delay Time: 7.8 ns Part # Aliases: /T3 PHT6N06T Other Names: 934054620135, PHT6N06T /T3