Результаты поиска PHT2NQ10T,135

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• PHT2NQ10T,135
  NXP Semiconductors — NXP Semiconductors PHT2NQ10T,135 Current - Continuous Drain (id) @ 25В° C: 2.5A Drain To Source Voltage (vdss): 100V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 5.1nC @ 10V Input Capacitance (ciss) @ Vds: 160pF @ 25V Mounting Type: Surface Mount Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261 Power - Max: 6.25W Rds On (max) @ Id, Vgs: 430 mOhm @ 1.75A, 10V Series: TrenchMOSв„ў Vgs(th) (max) @ Id: 4V @ 1mA Other Names: 934056839135, PHT2NQ10T /T3