Результаты поиска PHP33NQ20T,127

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• PHP33NQ20T,127
  NXP Semiconductors — NXP Semiconductors PHP33NQ20T,127 Configuration: Single Continuous Drain Current: 32.7 A Current - Continuous Drain (id) @ 25В° C: 32.7A Drain To Source Voltage (vdss): 200V Drain-source Breakdown Voltage: 200 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 32.2nC @ 10V Gate-source Breakdown Voltage: 20 V ID_COMPONENTS: 1950496 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 230W Power Dissipation: 230000 mW Rds On (max) @ Id, Vgs: 77 mOhm @ 15A, 10V Resistance Drain-source Rds (on): 0.077 Ohm @ 10 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Other Names: 934058107127::PHP33NQ20T::PHP33NQ20T