Результаты поиска PHP32N06LT,127
Найдено 2 результатов.
- NXP Semiconductors — NXP Semiconductors PHP32N06LT,127 Current - Continuous Drain (id) @ 25В° C: 34A Drain To Source Voltage (vdss): 60V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 17nC @ 5V Input Capacitance (ciss) @ Vds: 1280pF @ 25V Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 97W Rds On (max) @ Id, Vgs: 37 mOhm @ 20A, 10V Series: TrenchMOSв„ў Vgs(th) (max) @ Id: 2V @ 1mA Product Category: MOSFET RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: 15 V Continuous Drain Current: 34 A Resistance Drain-Source RDS (on): 0.037 Ohms Configuration: Single Maximum Operating Temperature: + 175 C Mounting Style: Through Hole Fall Time: 55 ns Minimum Operating Temperature: - 55 C Power Dissipation: 97 W Rise Time: 120 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 45 ns Part # Aliases: PHP32N06LT Other Names: 934056955127, PHP32N06LT
- NXP Semiconductors — NXP Semiconductors PHP32N06LT,127 Current - Continuous Drain (id) @ 25В° C: 34A Drain To Source Voltage (vdss): 60V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 17nC @ 5V Input Capacitance (ciss) @ Vds: 1280pF @ 25V Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 97W Rds On (max) @ Id, Vgs: 37 mOhm @ 20A, 10V Series: TrenchMOSв„ў Vgs(th) (max) @ Id: 2V @ 1mA Product Category: MOSFET RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: 15 V Continuous Drain Current: 34 A Resistance Drain-Source RDS (on): 0.037 Ohms Configuration: Single Maximum Operating Temperature: + 175 C Mounting Style: Through Hole Fall Time: 55 ns Minimum Operating Temperature: - 55 C Power Dissipation: 97 W Rise Time: 120 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 45 ns Part # Aliases: PHP32N06LT Other Names: 934056955127, PHP32N06LT