Результаты поиска PHP27NQ11T
Найдено 2 результатов.
- NXP — MOSFETs - Arrays TRENCHMOS (TM) FET
- NXP Semiconductors — NXP Semiconductors PHP27NQ11T,127 Configuration: Single Continuous Drain Current: 27.6 A Current - Continuous Drain (id) @ 25В° C: 27.6A Drain To Source Voltage (vdss): 110V Drain-source Breakdown Voltage: 110 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 30nC @ 10V Gate-source Breakdown Voltage: 20 V ID_COMPONENTS: 1950683 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 107W Power Dissipation: 107000 mW Rds On (max) @ Id, Vgs: 50 mOhm @ 14A, 10V Resistance Drain-source Rds (on): 0.05 Ohm @ 10 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 110 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.05 Ohms Fall Time: 24 ns Rise Time: 43 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 32 ns Part # Aliases: PHP27NQ11T Other Names: 934058502127::PHP27NQ11T::PHP27NQ11T