Результаты поиска PHP18NQ10T

Найдено 3 результатов.

• PHP18NQ10T
  NXP — MOSFETs - Arrays RAIL PWR-MOS
• PHP18NQ10T,127
  NXP Semiconductors — NXP Semiconductors PHP18NQ10T,127 Configuration: Single Continuous Drain Current: 18 A Current - Continuous Drain (id) @ 25В° C: 18A Drain To Source Voltage (vdss): 100V Drain-source Breakdown Voltage: 100 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 21nC @ 10V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1950417 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 79W Power Dissipation: 79000 mW Rds On (max) @ Id, Vgs: 90 mOhm @ 9A, 10V Resistance Drain-source Rds (on): 0.09 Ohm @ 10 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 100 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.09 Ohms Fall Time: 12 ns Rise Time: 36 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 18 ns Part # Aliases: PHP18NQ10T Other Names: 934055698127::PHP18NQ10T::PHP18NQ10T
• PHP18NQ10T,127
  NXP Semiconductors — NXP Semiconductors PHP18NQ10T,127 Configuration: Single Continuous Drain Current: 18 A Current - Continuous Drain (id) @ 25В° C: 18A Drain To Source Voltage (vdss): 100V Drain-source Breakdown Voltage: 100 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 21nC @ 10V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1950417 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 79W Power Dissipation: 79000 mW Rds On (max) @ Id, Vgs: 90 mOhm @ 9A, 10V Resistance Drain-source Rds (on): 0.09 Ohm @ 10 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 100 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.09 Ohms Fall Time: 12 ns Rise Time: 36 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 18 ns Part # Aliases: PHP18NQ10T Other Names: 934055698127::PHP18NQ10T::PHP18NQ10T