Результаты поиска PHP119NQ06T

Найдено 3 результатов.

• PHP119NQ06T
  NXP — MOSFETs - Arrays TRENCHMOS (TM)FET
• PHP119NQ06T,127
  NXP Semiconductors — NXP Semiconductors PHP119NQ06T,127 Configuration: Single Continuous Drain Current: 75 A Current - Continuous Drain (id) @ 25В° C: 75A Drain To Source Voltage (vdss): 55V Drain-source Breakdown Voltage: 55 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 53nC @ 10V Gate-source Breakdown Voltage: +/- 20 V Input Capacitance (ciss) @ Vds: 2820pF @ 25V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 200W Power Dissipation: 200 W Rds On (max) @ Id, Vgs: 7.1 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.0071 Ohms Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.0071 Ohms Fall Time: 41 ns Rise Time: 52 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 77 ns Part # Aliases: PHP119NQ06T Other Names: 934058552127, PHP119NQ06T
• PHP119NQ06T,127
  NXP Semiconductors — NXP Semiconductors PHP119NQ06T,127 Configuration: Single Continuous Drain Current: 75 A Current - Continuous Drain (id) @ 25В° C: 75A Drain To Source Voltage (vdss): 55V Drain-source Breakdown Voltage: 55 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 53nC @ 10V Gate-source Breakdown Voltage: +/- 20 V Input Capacitance (ciss) @ Vds: 2820pF @ 25V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 200W Power Dissipation: 200 W Rds On (max) @ Id, Vgs: 7.1 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.0071 Ohms Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.0071 Ohms Fall Time: 41 ns Rise Time: 52 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 77 ns Part # Aliases: PHP119NQ06T Other Names: 934058552127, PHP119NQ06T