Результаты поиска PHE13003C,126
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- NXP Semiconductors — NXP Semiconductors PHE13003C,126 Collector- Emitter Voltage Vceo Max: 400 V Configuration: Single Continuous Collector Current: 1.5 A Current - Collector (ic) (max): 1.5A Current - Collector Cutoff (max): 100ВµA Dc Collector/base Gain Hfe Min: 8 Dc Current Gain (hfe) (min) @ Ic, Vce: 5 @ 1A, 2V Frequency - Transition: - Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: TO-92-3 (Standard Body), TO-226 Power - Max: 2.1W Power Dissipation: 2.1 W Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 1.5V @ 500mA, 1.5A Voltage - Collector Emitter Breakdown (max): 400V RoHS: yes Collector- Emitter Voltage VCEO Max: 400 V DC Collector/Base Gain hfe Min: 8 Maximum Power Dissipation: 2.1 W Factory Pack Quantity: 2000