Результаты поиска PH955L,115

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• PH955L,115
  NXP Semiconductors — NXP Semiconductors PH955L,115 Current - Continuous Drain (id) @ 25В° C: 62.5A Drain To Source Voltage (vdss): 55V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 42nC @ 5V Input Capacitance (ciss) @ Vds: 2836pF @ 25V Mounting Type: Surface Mount Package / Case: LFPak-4 Power - Max: 62.5W Rds On (max) @ Id, Vgs: 8.3 mOhm @ 25A, 10V Series: TrenchMOSв„ў Vgs(th) (max) @ Id: 2V @ 1mA Product Category: MOSFET RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 62.5 A Resistance Drain-Source RDS (on): 0.0083 Ohms Configuration: Single Triple Source Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Fall Time: 25 ns Minimum Operating Temperature: - 55 C Power Dissipation: 62.5 W Rise Time: 71 ns Factory Pack Quantity: 1500 Typical Turn-Off Delay Time: 105 ns Part # Aliases: PH955L T/R Other Names: 934058856115, PH955L T/R