Результаты поиска PH6325L,115

Найдено 2 результатов.

• PH6325L,115
  NXP Semiconductors — NXP Semiconductors PH6325L,115 Configuration: Single Triple Source Continuous Drain Current: 78.7 A Current - Continuous Drain (id) @ 25В° C: 78.7A Drain To Source Voltage (vdss): 25V Drain-source Breakdown Voltage: 25 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 13.3nC @ 4.5V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1950598 Input Capacitance (ciss) @ Vds: 1871pF @ 12V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: LFPak-4 Power - Max: 62.5W Power Dissipation: 62500 mW Rds On (max) @ Id, Vgs: 6.3 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.0063 Ohm @ 10 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 25 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.0063 Ohms Fall Time: 12 ns Rise Time: 25 ns Factory Pack Quantity: 1500 Typical Turn-Off Delay Time: 32 ns Part # Aliases: PH6325L T/R Other Names: 568-2181-2, 934058203115, PH6325L T/R
• PH6325L,115
  NXP Semiconductors — NXP Semiconductors PH6325L,115 Configuration: Single Triple Source Continuous Drain Current: 78.7 A Current - Continuous Drain (id) @ 25В° C: 78.7A Drain To Source Voltage (vdss): 25V Drain-source Breakdown Voltage: 25 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 13.3nC @ 4.5V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1950598 Input Capacitance (ciss) @ Vds: 1871pF @ 12V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: LFPak-4 Power - Max: 62.5W Power Dissipation: 62500 mW Rds On (max) @ Id, Vgs: 6.3 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.0063 Ohm @ 10 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 25 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.0063 Ohms Fall Time: 12 ns Rise Time: 25 ns Factory Pack Quantity: 1500 Typical Turn-Off Delay Time: 32 ns Part # Aliases: PH6325L T/R Other Names: 568-2181-2, 934058203115, PH6325L T/R