Результаты поиска PH5525L,115
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- NXP Semiconductors — NXP Semiconductors PH5525L,115 Configuration: Single Triple Source Continuous Drain Current: 81.7 A Current - Continuous Drain (id) @ 25В° C: 81.7A Drain To Source Voltage (vdss): 25V Drain-source Breakdown Voltage: 25 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 16.6nC @ 4.5V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1950500 Input Capacitance (ciss) @ Vds: 2150pF @ 12V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: LFPak-4 Power - Max: 62.5W Power Dissipation: 62500 mW Rds On (max) @ Id, Vgs: 5.5 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.0055 Ohm @ 10 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2.15V @ 1mA Other Names: 934060924115, PH5525L T/R