Результаты поиска PH4840S,115

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• PH4840S,115
  NXP Semiconductors — NXP Semiconductors PH4840S,115 Current - Continuous Drain (id) @ 25?° C: 94.5A Drain To Source Voltage (vdss): 40V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 67nC @ 10V Input Capacitance (ciss) @ Vds: 3660pF @ 10V Mounting Type: Surface Mount Package / Case: LFPak-4 Power - Max: 62.5W Rds On (max) @ Id, Vgs: 4.1 mOhm @ 25A, 10V Series: TrenchMOS?„? Vgs(th) (max) @ Id: 3V @ 1mA Product Category: MOSFET RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 40 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 94.5 A Resistance Drain-Source RDS (on): 3.5 mOhms Configuration: Single Triple Source Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Fall Time: 31 ns Gate Charge Qg: 67 nC Minimum Operating Temperature: - 55 C Power Dissipation: 62.5 W Rise Time: 35 ns Factory Pack Quantity: 1500 Typical Turn-Off Delay Time: 82 ns Part # Aliases: PH4840S T/R Other Names: 568-2180-2, 934057823115, PH4840S T/R