Результаты поиска PH3855L,115

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• PH3855L,115
  NXP Semiconductors — NXP Semiconductors PH3855L,115 Current - Continuous Drain (id) @ 25?° C: 24A Drain To Source Voltage (vdss): 55V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 11.7nC @ 5V Input Capacitance (ciss) @ Vds: 765pF @ 25V Mounting Type: Surface Mount Package / Case: LFPak-4 Power - Max: 50W Rds On (max) @ Id, Vgs: 36 mOhm @ 15A, 10V Series: TrenchMOS?„? Vgs(th) (max) @ Id: 2V @ 1mA Product Category: MOSFET RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 15 V Continuous Drain Current: 24 A Resistance Drain-Source RDS (on): 0.036 Ohms Configuration: Single Triple Source Maximum Operating Temperature: + 175 C Mounting Style: SMD/SMT Fall Time: 72 ns Minimum Operating Temperature: - 55 C Power Dissipation: 50 W Rise Time: 93 ns Factory Pack Quantity: 1500 Typical Turn-Off Delay Time: 35 ns Part # Aliases: PH3855L T/R Other Names: 934058855115, PH3855L T/R