Результаты поиска PH3230S

Найдено 6 результатов.

• PH3230S
  Philips Semiconductors —
• PH3230S
  NXP Semiconductors —
• PH3230S T/R
  NXP — MOSFETs - Single N-CH TRENCH 30V
• PH3230S-01
  NXP Semiconductors —
• ph3230s-03
  NXP Semiconductors —
• PH3230S,115
  NXP Semiconductors — NXP Semiconductors PH3230S,115 Configuration: Single Triple Source Continuous Drain Current: 100 A Current - Continuous Drain (id) @ 25В° C: 100A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 42nC @ 5V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1950516 Input Capacitance (ciss) @ Vds: 4100pF @ 10V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: LFPak-4 Power - Max: 62.5W Power Dissipation: 62500 mW Rds On (max) @ Id, Vgs: 3.2 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.0032 Ohm @ 10 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 3V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.0032 Ohms Fall Time: 37 ns Rise Time: 37 ns Factory Pack Quantity: 1500 Typical Turn-Off Delay Time: 85 ns Part # Aliases: PH3230S T/R Other Names: 568-2345-2, 934057589115, PH3230S T/R