Результаты поиска PH3120L,115

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• PH3120L,115
  NXP Semiconductors — NXP Semiconductors PH3120L,115 Configuration: Single Continuous Drain Current: 100 A Current - Continuous Drain (id) @ 25В° C: 100A Drain To Source Voltage (vdss): 20V Drain-source Breakdown Voltage: 20 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 48.5nC @ 4.5V Gate Charge Qg: 48.5 nC Gate-source Breakdown Voltage: 20 V ID_COMPONENTS: 1950449 Input Capacitance (ciss) @ Vds: 4457pF @ 10V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: LFPak-4 Power - Max: 62.5W Power Dissipation: 62.5 W Rds On (max) @ Id, Vgs: 2.65 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 2.25 mOhms Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 20 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 2.25 mOhms Fall Time: 88 ns Rise Time: 90 ns Factory Pack Quantity: 1500 Typical Turn-Off Delay Time: 114 ns Part # Aliases: PH3120L T/R Other Names: 568-2178-2, 934057822115, PH3120L T/R