Результаты поиска PH3075L,115

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• PH3075L,115
  NXP Semiconductors — NXP Semiconductors PH3075L,115 Configuration: Single Triple Source Continuous Drain Current: 30 A Current - Continuous Drain (id) @ 25В° C: 30A Drain To Source Voltage (vdss): 75V Drain-source Breakdown Voltage: 75 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 19nC @ 5V Gate-source Breakdown Voltage: +/- 15 V Input Capacitance (ciss) @ Vds: 2070pF @ 25V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: LFPak-4 Power - Max: 75W Power Dissipation: 75 W Rds On (max) @ Id, Vgs: 28 mOhm @ 15A, 10V Resistance Drain-source Rds (on): 0.028 Ohms Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2.3V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 75 V Gate-Source Breakdown Voltage: +/- 15 V Resistance Drain-Source RDS (on): 0.028 Ohms Fall Time: 83 ns Rise Time: 106 ns Factory Pack Quantity: 1500 Typical Turn-Off Delay Time: 51 ns Part # Aliases: PH3075L T/R Other Names: 934058853115, PH3075L T/R