Результаты поиска PEMX1,115
Найдено 3 результатов.
- NXP Semiconductors — NXP Semiconductors PEMX1,115 Collector- Emitter Voltage Vceo Max: 40 V Configuration: Dual Continuous Collector Current: 100 mA Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): - Dc Collector/base Gain Hfe Min: 120 Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 1mA, 6V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 100MHz ID_COMPONENTS: 1949819 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 200 mA Maximum Operating Frequency: 100 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SS Mini-6 (SOT-666) Power - Max: 300mW Power Dissipation: 200 mW Series: - Transistor Polarity: NPN Transistor Type: 2 NPN (Dual) Vce Saturation (max) @ Ib, Ic: 200mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (max): 40V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: 40 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 200 mA Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 120 DC Current Gain hFE Max: 120 at 1 mA at 6 V Maximum Power Dissipation: 200 mW Factory Pack Quantity: 4000 Part # Aliases: PEMX1 T/R Other Names: 934056704115, PEMX1 T/R
- NXP Semiconductors — NXP Semiconductors PEMX1,115 Collector- Emitter Voltage Vceo Max: 40 V Configuration: Dual Continuous Collector Current: 100 mA Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): - Dc Collector/base Gain Hfe Min: 120 Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 1mA, 6V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 100MHz ID_COMPONENTS: 1949819 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 200 mA Maximum Operating Frequency: 100 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SS Mini-6 (SOT-666) Power - Max: 300mW Power Dissipation: 200 mW Series: - Transistor Polarity: NPN Transistor Type: 2 NPN (Dual) Vce Saturation (max) @ Ib, Ic: 200mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (max): 40V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: 40 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 200 mA Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 120 DC Current Gain hFE Max: 120 at 1 mA at 6 V Maximum Power Dissipation: 200 mW Factory Pack Quantity: 4000 Part # Aliases: PEMX1 T/R Other Names: 934056704115, PEMX1 T/R
- NXP Semiconductors — NXP Semiconductors PEMX1,115 Collector- Emitter Voltage Vceo Max: 40 V Configuration: Dual Continuous Collector Current: 100 mA Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): - Dc Collector/base Gain Hfe Min: 120 Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 1mA, 6V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 100MHz ID_COMPONENTS: 1949819 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 200 mA Maximum Operating Frequency: 100 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SS Mini-6 (SOT-666) Power - Max: 300mW Power Dissipation: 200 mW Series: - Transistor Polarity: NPN Transistor Type: 2 NPN (Dual) Vce Saturation (max) @ Ib, Ic: 200mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (max): 40V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: 40 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 200 mA Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 120 DC Current Gain hFE Max: 120 at 1 mA at 6 V Maximum Power Dissipation: 200 mW Factory Pack Quantity: 4000 Part # Aliases: PEMX1 T/R Other Names: 934056704115, PEMX1 T/R
