Результаты поиска PEMD30,115
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- NXP Semiconductors — NXP Semiconductors PEMD30,115 Collector- Emitter Voltage Vceo Max: 50 V Configuration: Dual Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): 1?µA Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 20mA, 5V Frequency - Transition: - ID_COMPONENTS: 1947813 Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SS Mini-6 (SOT-666) Peak Dc Collector Current: 100 mA Power - Max: 300mW Resistor - Base (r1) (ohms): 2.2K Resistor - Emitter Base (r2) (ohms): - Transistor Polarity: NPN/PNP Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Typical Input Resistor: 2.2 KOhm Vce Saturation (max) @ Ib, Ic: 150mV @ 500?µA, 10mA Voltage - Collector Emitter Breakdown (max): 50V Product Category: Transistors Switching - Resistor Biased RoHS: yes Collector- Emitter Voltage VCEO Max: 50 V Peak DC Collector Current: 100 mA Factory Pack Quantity: 4000 Part # Aliases: PEMD30 T/R Other Names: 934059928115, PEMD30 T/R