Результаты поиска PEMB11,115
Найдено 1 результатов.
- NXP Semiconductors — NXP Semiconductors PEMB11,115 Collector- Emitter Voltage Vceo Max: - 50 V Configuration: Dual Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): 1ВµA Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V Emitter- Base Voltage Vebo: - 10 V Frequency - Transition: - ID_COMPONENTS: 1947796 Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SS Mini-6 (SOT-666) Peak Dc Collector Current: - 100 mA Power - Max: 300mW Power Dissipation: 200 mW Resistor - Base (r1) (ohms): 10K Resistor - Emitter Base (r2) (ohms): 10K Transistor Polarity: PNP/PNP Transistor Type: 2 PNP - Pre-Biased (Dual) Typical Input Resistor: 10 KOhms Typical Resistor Ratio: 1 Vce Saturation (max) @ Ib, Ic: 150mV @ 500ВµA, 10mA Voltage - Collector Emitter Breakdown (max): 50V Other Names: 934056864115, PEMB11 T/R