Результаты поиска PEMB10,115

Найдено 2 результатов.

• PEMB10,115
  NXP Semiconductors — NXP Semiconductors PEMB10,115 Collector- Emitter Voltage Vceo Max: 50 V Configuration: Dual Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): 1ВµA Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: - ID_COMPONENTS: 1947778 Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SS Mini-6 (SOT-666) Peak Dc Collector Current: 100 mA Power - Max: 300mW Resistor - Base (r1) (ohms): 2.2K Resistor - Emitter Base (r2) (ohms): 47K Transistor Polarity: PNP Transistor Type: 2 PNP - Pre-Biased (Dual) Typical Input Resistor: 2.2 KOhm Typical Resistor Ratio: 0.047 Vce Saturation (max) @ Ib, Ic: 100mV @ 250ВµA, 5mA Voltage - Collector Emitter Breakdown (max): 50V Other Names: 934056870115, PEMB10 T/R
• PEMB10,115
  NXP Semiconductors — NXP Semiconductors PEMB10,115 Collector- Emitter Voltage Vceo Max: 50 V Configuration: Dual Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): 1ВµA Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: - ID_COMPONENTS: 1947778 Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SS Mini-6 (SOT-666) Peak Dc Collector Current: 100 mA Power - Max: 300mW Resistor - Base (r1) (ohms): 2.2K Resistor - Emitter Base (r2) (ohms): 47K Transistor Polarity: PNP Transistor Type: 2 PNP - Pre-Biased (Dual) Typical Input Resistor: 2.2 KOhm Typical Resistor Ratio: 0.047 Vce Saturation (max) @ Ib, Ic: 100mV @ 250ВµA, 5mA Voltage - Collector Emitter Breakdown (max): 50V Other Names: 934056870115, PEMB10 T/R