Результаты поиска PDTD123TS,126

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• PDTD123TS,126
  NXP Semiconductors — NXP Semiconductors PDTD123TS,126 Current - Collector (ic) (max): 500mA Current - Collector Cutoff (max): 500nA Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 50mA, 5V Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Power - Max: 500mW Resistor - Base (r1) (ohms): 2.2K Transistor Type: NPN - Pre-Biased Vce Saturation (max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Voltage - Collector Emitter Breakdown (max): 50V Other Names: 934059726126, PDTD123TS AMO