Результаты поиска PDTC114EM,315
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- NXP Semiconductors — NXP Semiconductors PDTC114EM,315 Collector- Emitter Voltage Vceo Max: 50 V Configuration: Single Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): 1ВµA Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V Emitter- Base Voltage Vebo: 10 V ID_COMPONENTS: 1948036 Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Peak Dc Collector Current: 100 mA Power - Max: 250mW Power Dissipation: 250 mW Resistor - Base (r1) (ohms): 10K Resistor - Emitter Base (r2) (ohms): 10K Transistor Polarity: NPN Transistor Type: NPN - Pre-Biased Typical Input Resistor: 10 KOhms Typical Resistor Ratio: 1 Vce Saturation (max) @ Ib, Ic: 150mV @ 500ВµA, 10mA Voltage - Collector Emitter Breakdown (max): 50V Other Names: 934057170315, PDTC114EM T/R