Результаты поиска PDTA123JS,126

Найдено 1 результатов.

• PDTA123JS,126
  NXP Semiconductors — NXP Semiconductors PDTA123JS,126 Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): 1ВµA Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 5V Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Power - Max: 500mW Resistor - Base (r1) (ohms): 2.2K Resistor - Emitter Base (r2) (ohms): 47K Transistor Type: PNP - Pre-Biased Vce Saturation (max) @ Ib, Ic: 100mV @ 250ВµA, 5mA Voltage - Collector Emitter Breakdown (max): 50V Other Names: 934057560126, PDTA123JS AMO