Результаты поиска PDTA113ZS,126

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• PDTA113ZS,126
  NXP Semiconductors — NXP Semiconductors PDTA113ZS,126 Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): 1ВµA Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 5V Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Power - Max: 500mW Resistor - Base (r1) (ohms): 1K Resistor - Emitter Base (r2) (ohms): 10K Transistor Type: PNP - Pre-Biased Vce Saturation (max) @ Ib, Ic: 150mV @ 500ВµA, 10mA Voltage - Collector Emitter Breakdown (max): 50V Other Names: 934058782126, PDTA113ZS AMO