Результаты поиска PDTA113EU,115
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- NXP Semiconductors — NXP Semiconductors PDTA113EU,115 Collector- Emitter Voltage Vceo Max: 50 V Configuration: Single Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): 1ВµA Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 40mA, 5V ID_COMPONENTS: 1947771 Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Peak Dc Collector Current: 100 mA Power - Max: 200mW Resistor - Base (r1) (ohms): 1K Resistor - Emitter Base (r2) (ohms): 1K Transistor Polarity: PNP Transistor Type: PNP - Pre-Biased Typical Input Resistor: 1 KOhm Typical Resistor Ratio: 1 Vce Saturation (max) @ Ib, Ic: 150mV @ 1.5mA, 30mA Voltage - Collector Emitter Breakdown (max): 50V Product Category: Transistors Switching - Resistor Biased RoHS: yes Collector- Emitter Voltage VCEO Max: 50 V Peak DC Collector Current: 100 mA Factory Pack Quantity: 3000 Part # Aliases: PDTA113EU T/R Other Names: 934058794115, PDTA113EU T/R