Результаты поиска PDTA113ES,126
Найдено 1 результатов.
- NXP Semiconductors — NXP Semiconductors PDTA113ES,126 Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): 1ВµA Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 40mA, 5V Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Power - Max: 500mW Resistor - Base (r1) (ohms): 1K Resistor - Emitter Base (r2) (ohms): 1K Transistor Type: PNP - Pre-Biased Vce Saturation (max) @ Ib, Ic: 150mV @ 1.5mA, 30mA Voltage - Collector Emitter Breakdown (max): 50V Other Names: 934058783126, PDTA113ES AMO