Результаты поиска PBSS8110X,135
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- NXP Semiconductors — NXP Semiconductors PBSS8110X,135 Collector- Emitter Voltage Vceo Max: 100 V Configuration: Single Dual Collector Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 250mA, 10V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 100MHz ID_COMPONENTS: 1949793 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 1 A Maximum Operating Frequency: 100 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab) Power - Max: 2W Power Dissipation: 2000 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 200mV @ 100mA, 1A Voltage - Collector Emitter Breakdown (max): 100V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 120 V Collector- Emitter Voltage VCEO Max: 100 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 150 at 1 mA at 10 V, 150 at 250 mA at 10 V, 100 at 500 mA at 10 V, 80 at 1 A at 10 V DC Current Gain hFE Max: 150 at 1 mA at 10 V Maximum Power Dissipation: 2000 mW Factory Pack Quantity: 4000 Part # Aliases: /T3 PBSS8110X Other Names: 934057975135, PBSS8110X /T3