Результаты поиска PBSS8110T,215

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• PBSS8110T,215
  NXP Semiconductors — NXP Semiconductors PBSS8110T,215 Collector- Emitter Voltage Vceo Max: 100 V Configuration: Single Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 250mA, 10V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 100MHz ID_COMPONENTS: 1949616 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 1 A Maximum Operating Frequency: 100 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3в„ў, SSD3, SST3 Power - Max: 480mW Power Dissipation: 480 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 200mV @ 100mA, 1A Voltage - Collector Emitter Breakdown (max): 100V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 120 V Collector- Emitter Voltage VCEO Max: 100 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 150 at 1 mA at 10 V, 150 at 250 mA at 10 V, 100 at 0.5 A at 10 V, 80 at 1 A at 10 V DC Current Gain hFE Max: 150 at 1 mA at 10 V Maximum Power Dissipation: 480 mW Factory Pack Quantity: 3000 Part # Aliases: PBSS8110T T/R Other Names: 568-4344-2, 934057672215, PBSS8110T T/R