Результаты поиска PBSS5480X,135
Найдено 2 результатов.
- NXP Semiconductors — NXP Semiconductors PBSS5480X,135 Collector- Emitter Voltage Vceo Max: 80 V Configuration: Single Current - Collector (ic) (max): 4A Current - Collector Cutoff (max): 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 2A, 2V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 125MHz ID_COMPONENTS: 1949611 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 4 A Maximum Operating Frequency: 125 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab) Power - Max: 1.6W Power Dissipation: 2500 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 380mV @ 500mA, 5A Voltage - Collector Emitter Breakdown (max): 80V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 80 V Collector- Emitter Voltage VCEO Max: 80 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 4 A Gain Bandwidth Product fT: 125 MHz DC Collector/Base Gain hfe Min: 200 at 0.5 A at 2 V, 180 at 1 A at 2 V, 150 at 2 A at 2 V, 80 at 4 A at 2 V DC Current Gain hFE Max: 200 at 0.5 A at 2 V Maximum Power Dissipation: 2500 mW Factory Pack Quantity: 4000 Part # Aliases: /T3 PBSS5480X Other Names: 934058211135, PBSS5480X /T3
- NXP Semiconductors — NXP Semiconductors PBSS5480X,135 Collector- Emitter Voltage Vceo Max: 80 V Configuration: Single Current - Collector (ic) (max): 4A Current - Collector Cutoff (max): 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 2A, 2V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 125MHz ID_COMPONENTS: 1949611 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 4 A Maximum Operating Frequency: 125 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab) Power - Max: 1.6W Power Dissipation: 2500 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 380mV @ 500mA, 5A Voltage - Collector Emitter Breakdown (max): 80V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 80 V Collector- Emitter Voltage VCEO Max: 80 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 4 A Gain Bandwidth Product fT: 125 MHz DC Collector/Base Gain hfe Min: 200 at 0.5 A at 2 V, 180 at 1 A at 2 V, 150 at 2 A at 2 V, 80 at 4 A at 2 V DC Current Gain hFE Max: 200 at 0.5 A at 2 V Maximum Power Dissipation: 2500 mW Factory Pack Quantity: 4000 Part # Aliases: /T3 PBSS5480X Other Names: 934058211135, PBSS5480X /T3