Результаты поиска PBSS5420D,115
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- NXP Semiconductors — NXP Semiconductors PBSS5420D,115 Current - Collector (ic) (max): 4A Current - Collector Cutoff (max): 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2A, 2V Frequency - Transition: 80MHz Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mounting Type: Surface Mount Package / Case: SC-74-6 Power - Max: 1.1W Series: - Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 420mV @ 600mA, 6A Voltage - Collector Emitter Breakdown (max): 20V Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: PNP Collector- Base Voltage VCBO: 20 V Collector- Emitter Voltage VCEO Max: 20 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 4 A Gain Bandwidth Product fT: 80 MHz DC Collector/Base Gain hfe Min: 250 at 0.5 A at 2 V, 250 at 1 A at 2 V, 200 at 2 A at 2 V, 120 at 4 A at 2 V, 80 at 6 A at 2 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT DC Current Gain hFE Max: 250 at 0.5 A at 2 V Maximum Power Dissipation: 2500 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 3000 Part # Aliases: PBSS5420D T/R Other Names: 934058274115, PBSS5420D T/R