Результаты поиска PBSS5350SS,115
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- NXP Semiconductors — NXP Semiconductors PBSS5350SS,115 Collector- Emitter Voltage Vceo Max: 50 V Configuration: Dual Common Collector Current - Collector (ic) (max): 2.7A Current - Collector Cutoff (max): 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 1A, 2V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: - ID_COMPONENTS: 1949821 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 2.7 A Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: 8-SOIC (3.9mm Width) Power - Max: 750mW Power Dissipation: 1430 mW Series: - Transistor Polarity: NPN/PNP Transistor Type: 2 PNP (Dual) Vce Saturation (max) @ Ib, Ic: 370mV @ 270mA, 2.7A Voltage - Collector Emitter Breakdown (max): 50V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: 50 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 2.7 A Brand: NXP Semiconductors DC Collector/Base Gain hfe Min: 200 at 100 mA at 2 V, 200 at 500 mA at 2 V, 180 at 1 A at 2 V, 130 at 2 A at 2 V, 95 at 2.7 A at 2 V DC Current Gain hFE Max: 200 at 100 mA at 2 V Maximum Power Dissipation: 1430 mW Factory Pack Quantity: 1000 Part # Aliases: PBSS5350SS T/R Other Names: 934061032115, PBSS5350SS T/R