Результаты поиска PBSS5240Y,115
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- NXP Semiconductors — NXP Semiconductors PBSS5240Y,115 Collector- Emitter Voltage Vceo Max: 40 V Configuration: Single Quad Collector Current - Collector (ic) (max): 2A Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 210 @ 1A, 2V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 100MHz ID_COMPONENTS: 1949768 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 2 A Maximum Operating Frequency: 100 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-70-6, SC-88, SOT-363 Power - Max: 430mW Power Dissipation: 430 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 350mV @ 200mA, 2A Voltage - Collector Emitter Breakdown (max): 40V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 40 V Collector- Emitter Voltage VCEO Max: 40 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 2 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 300 at 100 mA at 2 V, 260 at 500 mA at 2 V, 210 at 1000 mA at 2 V, 100 at 2000 mA at 2 V DC Current Gain hFE Max: 300 at 100 mA at 2 V Maximum Power Dissipation: 430 mW Factory Pack Quantity: 3000 Part # Aliases: PBSS5240Y T/R Other Names: 934056512115, PBSS5240Y T/R