Результаты поиска PBSS5240V,115
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- NXP Semiconductors — NXP Semiconductors PBSS5240V,115 Collector- Emitter Voltage Vceo Max: 40 V Configuration: Single Quad Collector Current - Collector (ic) (max): 1.8A Current - Collector Cutoff (max): 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 100mA, 5V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 150MHz ID_COMPONENTS: 1949827 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 1.8 A Maximum Operating Frequency: 150 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SS Mini-6 (SOT-666) Power - Max: 900mW Power Dissipation: 1200 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 530mV @ 200mA, 2A Voltage - Collector Emitter Breakdown (max): 40V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 40 V Collector- Emitter Voltage VCEO Max: 40 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1.8 A Gain Bandwidth Product fT: 150 MHz Brand: NXP Semiconductors DC Collector/Base Gain hfe Min: 300 at 1 mA at 5 V, 300 at 100 mA at 5 V, 250 at 500 mA at 5 V, 160 at 1 A at 5 V DC Current Gain hFE Max: 300 at 1 mA at 5 V Maximum Power Dissipation: 1200 mW Factory Pack Quantity: 4000 Part # Aliases: PBSS5240V T/R Other Names: 934057073115, PBSS5240V T/R