Результаты поиска PBSS5220V,115
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- NXP Semiconductors — NXP Semiconductors PBSS5220V,115 Collector- Emitter Voltage Vceo Max: 20 V Configuration: Single Quad Collector Current - Collector (ic) (max): 2A Current - Collector Cutoff (max): 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 155 @ 1A, 2V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 185MHz ID_COMPONENTS: 1950321 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 2 A Maximum Operating Frequency: 185 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SS Mini-6 (SOT-666) Power - Max: 900mW Power Dissipation: 900 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 390mV @ 200mA, 2A Voltage - Collector Emitter Breakdown (max): 20V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 20 V Collector- Emitter Voltage VCEO Max: 20 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 2 A Gain Bandwidth Product fT: 185 MHz DC Collector/Base Gain hfe Min: 220 at 1 mA at 2 V, 220 at 100 mA at 2 V, 220 at 500 mA at 2 V, 155 at 1 A at 2 V, 60 at 2 A at 2 V DC Current Gain hFE Max: 220 at 1 mA at 2 V Maximum Power Dissipation: 900 mW Factory Pack Quantity: 4000 Part # Aliases: PBSS5220V T/R Other Names: 934059261115, PBSS5220V T/R