Результаты поиска PBSS5160U,115

Найдено 2 результатов.

• PBSS5160U,115
  NXP Semiconductors — NXP Semiconductors PBSS5160U,115 Collector- Emitter Voltage Vceo Max: - 60 V Configuration: Single Continuous Collector Current: - 700 mA Current - Collector (ic) (max): 700mA Current - Collector Cutoff (max): 100nA Dc Collector/base Gain Hfe Min: 200 Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 500mA, 5V Emitter- Base Voltage Vebo: - 5 V Frequency - Transition: 185MHz ID_COMPONENTS: 1949475 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: - 2 A Maximum Operating Frequency: 185 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-70-3, SOT-323-3 Power - Max: 415mW Power Dissipation: 250 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 340mV @ 100mA, 1A Voltage - Collector Emitter Breakdown (max): 60V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 80 V Collector- Emitter Voltage VCEO Max: - 60 V Emitter- Base Voltage VEBO: - 5 V Maximum DC Collector Current: - 2 A Gain Bandwidth Product fT: 185 MHz Brand: NXP Semiconductors DC Collector/Base Gain hfe Min: 200 DC Current Gain hFE Max: 200 at 1 mA at 5 V Maximum Power Dissipation: 250 mW Factory Pack Quantity: 3000 Part # Aliases: PBSS5160U T/R Other Names: 934058123115, PBSS5160U T/R
• PBSS5160U,115
  NXP Semiconductors — NXP Semiconductors PBSS5160U,115 Collector- Emitter Voltage Vceo Max: - 60 V Configuration: Single Continuous Collector Current: - 700 mA Current - Collector (ic) (max): 700mA Current - Collector Cutoff (max): 100nA Dc Collector/base Gain Hfe Min: 200 Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 500mA, 5V Emitter- Base Voltage Vebo: - 5 V Frequency - Transition: 185MHz ID_COMPONENTS: 1949475 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: - 2 A Maximum Operating Frequency: 185 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-70-3, SOT-323-3 Power - Max: 415mW Power Dissipation: 250 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 340mV @ 100mA, 1A Voltage - Collector Emitter Breakdown (max): 60V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 80 V Collector- Emitter Voltage VCEO Max: - 60 V Emitter- Base Voltage VEBO: - 5 V Maximum DC Collector Current: - 2 A Gain Bandwidth Product fT: 185 MHz Brand: NXP Semiconductors DC Collector/Base Gain hfe Min: 200 DC Current Gain hFE Max: 200 at 1 mA at 5 V Maximum Power Dissipation: 250 mW Factory Pack Quantity: 3000 Part # Aliases: PBSS5160U T/R Other Names: 934058123115, PBSS5160U T/R